M12L64322A_07 Datasheet, PDF (10/47 Pages) Elite Semiconductor Memory Technology Inc. – 512K x 32 Bit x 4 Banks Synchronous DRAM

ESMT
M12L64322A
SIMPLIFIED TRUTH TABLE
COMMAND
CKEn-1 CKEn CS RAS CAS WE DQM BA0,1 A10/AP A9~A0 Note
Register
Mode Register set
H
X LL L L X
OP CODE
1,2
Auto Refresh
H
3
H
LL L H X
X
Refresh
Self
Entry
L
3
Refresh
LH H H X
3
Exit
L
H
X
HX X X X
3
Bank Active & Row Addr.
H
X LL H H X
V
Row Address
Read &
Auto Precharge Disable
H
Column Address Auto Precharge Enable
X LH L H X
V
L Column 4
Address
H _(A0~A7) 4,5
Write &
Auto Precharge Disable
H
Column Address Auto Precharge Enable
X LH L L X
V
L Column 4
Address
H _(A0~A7) 4,5
Burst Stop
H
X LH H L X
X
6
Precharge
Bank Selection
All Banks
V
L
H
X LL H L X
X
X
H
HX X X
Clock Suspend or
Entry
H
L
X
Active Power Down
LV V V
X
Exit
L
H XX X X X
HX X X
Entry
H
L
X
Precharge Power Down Mode
LH H H
X
HX X X
Exit
L
H
X
LV V V
DQM
No Operating Command
H
X
V
X
7
HX X X
H
X
X
X
LH H H
Note :
(V = Valid , X = Don’t Care. H = Logic High , L = Logic Low )
1.OP Code : Operating Code
A0~A10 & BA0~BA1 : Program keys. (@ MRS)
2.MRS can be issued only at all banks precharge state.
A new command can be issued after 2 CLK cycles of MRS.
3.Auto refresh functions are as same as CBR refresh of DRAM.
The automatical precharge without row precharge of command is meant by “Auto”.
Auto/self refresh can be issued only at all banks precharge state.
4.BA0~BA1 : Bank select addresses.
If both BA1 and BA0 are “Low” at read ,write , row active and precharge ,bank A is selected.
If both BA1 is “Low” and BA0 is “High” at read ,write , row active and precharge ,bank B is selected.
Elite Semiconductor Memory Technology Inc.
Publication Date: Mar. 2007
Revision: 2.3
10/47