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| EN27LN4G08 Datasheet, PDF (51/54 Pages) Eon Silicon Solution Inc. – 4 Gigabit (512M x 8), 3.3 V NAND Flash Memory | |||
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EN27LN4G08
Write Protect Operation
Enable WP# during erase and program busy is prohibited. The erase and program operations are
enabled and disable as follows.
Program enable mode:
Note: WP# keeps âHighâ until programming finish
Program disable mode:
This Data Sheet may be revised by subsequent versions
51
or modifications due to changes in technical specifications.
©2013 Eon Silicon Solution, Inc., www.eonssi.com
Rev. A, Issue Date: 2013/10/03
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