EN27LN4G08 Datasheet, PDF (45/54 Pages) Eon Silicon Solution Inc. – 4 Gigabit (512M x 8), 3.3 V NAND Flash Memory

EN27LN4G08
Two-Plane Page Program
Two-Plane Page Program is an extension of Page Program, for a single plane with 2,112 byte data
registers. Since the device is equipped with two memory planes, activating the two sets of 2112 byte
data registers enables a simultaneous programming of two pages.
After writing the first set of data up to 2,112 byte into the selected data registers via cache registers,
Dummy Page Program command (11h) instead of actual Page Program command (10h) is inputted to
finish data-loading of the first plane. Since no programming process is involved, R/B# remains in busy
state for a short period of time (t_DBSY). Read Status command (70h) may be issued to find out when the
device returns to ready state by polling the R/B status bit (I/O 6). Then the next set of data for the other
plane is inputted after 81h command and address sequences. After inputting data for the last page,
actual True Page Program (10h) instead of dummy Page Program command (11h) must be followed to
start the programming process. The operation of R/B and Read Status is the same as that of Page
Program. Although two planes are programmed simultaneously, pass/fail is not available for each page
when the program operation completes. Status bit of I/O 0 is set to “1” when any of the pages fails.
This Data Sheet may be revised by subsequent versions
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or modifications due to changes in technical specifications.
©2013 Eon Silicon Solution, Inc., www.eonssi.com
Rev. A, Issue Date: 2013/10/03