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EN27LN4G08 Datasheet, PDF (28/54 Pages) Eon Silicon Solution Inc. – 4 Gigabit (512M x 8), 3.3 V NAND Flash Memory
EN27LN4G08
Note:
1. The column address will be reset to 0 by the 3Fh command input.
2. Cache Read operation is available only within a block.
3. Make sure to terminate the operation with 3Fh command. If the operation is terminated by 31h
command, monitor I/O6 (Ready/Busy) by issuing Status Read Command (70h) and make sure the
previous page read operation is completed. If the page read operation is completed, issue FFh reset
before next operation.
This Data Sheet may be revised by subsequent versions
28
or modifications due to changes in technical specifications.
©2013 Eon Silicon Solution, Inc., www.eonssi.com
Rev. A, Issue Date: 2013/10/03