|
EN27LN4G08 Datasheet, PDF (1/54 Pages) Eon Silicon Solution Inc. – 4 Gigabit (512M x 8), 3.3 V NAND Flash Memory | |||
|
EN27LN4G08
4 Gigabit (512M x 8), 3.3 V NAND Flash Memory
EN27LN4G08
Features
⢠Voltage Supply: 2.7V ~ 3.6V
⢠Organization
- Memory Cell Array :
(512M + 16M) x 8bit
- Data Register : (2K + 64) x 8bit
⢠Automatic Program and Erase
- Page Program : (2K + 64) bytes
- Block Erase : (128K + 4K) bytes
⢠Page Read Operation
- Page Size : (2K + 64) bytes
- Random Read : 25µs (Max.)
- Serial Access : 25ns (Min.)
⢠Memory Cell: 1bit/Memory Cell
⢠Fast Write Cycle Time
- Page Program Time : 250µs (Typ.)
- Block Erase Time : 2ms (Typ.)
⢠Command/Address/Data Multiplexed I/O Port
⢠Hardware Data Protection
- Program/Erase Lockout During Power
Transitions
⢠Reliable CMOS Floating-Gate Technology
- ECC Requirement: 4 bit/512 Byte
- Endurance: 100K Program/Erase Cycles
- Data Retention: 10 Years
⢠Command Register Operation
⢠Automatic Page 0 Read at Power-Up Option
- Boot from NAND support
- Automatic Memory Download
⢠NOP: 4 cycles
⢠Cache Program Operation for High Performance
Program
⢠Cache Read Operation
⢠Copy-Back Operation
- EDO mode
- OTP Operation
- Two-Plane Operation
This Data Sheet may be revised by subsequent versions
1
or modifications due to changes in technical specifications.
©2013 Eon Silicon Solution, Inc., www.eonssi.com
Rev. A, Issue Date: 2013/10/03
|
▷ |