EN27LN4G08 Datasheet, PDF(19/54 Page) Eon Silicon Solution Inc. – 4 Gigabit (512M x 8), 3.3 V NAND Flash Memory

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EN27LN4G08 Datasheet, PDF (19/54 Pages) Eon Silicon Solution Inc. – 4 Gigabit (512M x 8), 3.3 V NAND Flash Memory

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Input Data Latch Cycle

EN27LN4G08

Serial access Cycle after Read (CLE = L, ALE = L, WE# = H)

Note:

1. Dout Transition is measured at Â±200mV from steady state voltage with load.

2. tRHOH starts to be valid when frequency is lower than 33MHz.

This Data Sheet may be revised by subsequent versions

or modifications due to changes in technical specifications.

Rev. A, Issue Date: 2013/10/03

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