EN27LN4G08 Datasheet, PDF(23/54 Page) Eon Silicon Solution Inc. – 4 Gigabit (512M x 8), 3.3 V NAND Flash Memory

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EN27LN4G08 Datasheet, PDF (23/54 Pages) Eon Silicon Solution Inc. – 4 Gigabit (512M x 8), 3.3 V NAND Flash Memory

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Page Program Operation with Random Data Input

EN27LN4G08

Note: tADL is the time from WE# rising edge of final address cycle to the WE# rising edge of first data

cycle.

Copy-Back Program Operation with Random Data Input

This Data Sheet may be revised by subsequent versions

or modifications due to changes in technical specifications.

Rev. A, Issue Date: 2013/10/03

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