DG306AE25 Datasheet, PDF (9/19 Pages) Dynex Semiconductor – Gate Turn-off Thyristor

DG306AE25
3.0
2.5
2.0
1.5
1.0
0.5
0
0
t_r
t_d
Conditions:
T_j = 125˚C, I_FGM = 20A
Cs = 1.0µF, Rs = 10 Ohms,
dI_T/dt = 300A/µs, V_D = 1500V
100
200
300
400
500
600
On-state current - (A)
Fig.13 Delay & rise time vs turn-on current
5.0
Conditions:
4.5
I_T = 600A
T_j = 125˚C
Cs = 1.0µF
4.0
Rs = 10 Ohms
dI_T/dt = 300A/µs
3.5
dI_FG/dt = 20A/µs
V_D = 1500V
3.0
2.5
t_r
2.0
1.5
1.0
t_d
0.5
0
0 10 20 30 40 50 60 70 80
Peak forward gate current I_FGM- (A)
Fig.14 Delay time & rise time vs peak forward gate current
9/19