DG306AE25 Datasheet, PDF (11/19 Pages) Dynex Semiconductor – Gate Turn-off Thyristor

DG306AE25
1000
900
800
Conditions:
T_j = 125˚C
Cs = 1.0µF
dI_GQ/dt = 15A/µs
700
600
500
400
300
200
100
0
100
200
300
400
500
On-state current - (A)
Fig.17 Turn-off energy vs on-state current
V_DM = 2000V
V_DM = 1500V
V_DM = 1000V
600
1100
1000
V_DM = 2000V
900
V_DM = 1500V
800
700
Conditions: ^{VDM = 1000V}
I_T = 600A
T_j = 125˚C
Cs = 1.0µF
600
10 15 20 25 30 35 40 45 50
Rate of rise of reverse gate current dI_GQ/dt- (A/µs)
Fig.18 Turn-off energy loss vs rate of rise of reverse gate current
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