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DG306AE25 Datasheet, PDF (6/19 Pages) Dynex Semiconductor – Gate Turn-off Thyristor | |||
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DG306AE25
800
Conditions;
dc
700 IG(ON) = 2A
180Ë
600
120Ë
500
60Ë
400
30Ë
300
200
100
0
0
100
200
300 350
65 70 80 90 100 110 120 130
Mean on-state current - (A)
Maximum permissible case
temperature - (ËC)
Fig.6 Steady state rectangular wave conduction loss - double side cooled
600
500
Conditions;
IG(ON) = 2A
180Ë
120Ë
90Ë
60Ë
400
30Ë
300
200
100
0
0
100
200
300
80 90 100 110 120 130 140
Mean on-state current - (A)
Maximum permissible case
temperature - (ËC)
Fig.7 Steady state sinusoidal wave conduction loss - double side cooled
6/19
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