DG306AE25 Datasheet, PDF (12/19 Pages) Dynex Semiconductor – Gate Turn-off Thyristor

DG306AE25
900
800
Conditions:
700
T_j = 125˚C
V_DM = 1500V
dI_GQ/dt = 15A/µs
600
500
400
300
200
100
0
0
100
Cs = 1.0µF
200
300
400
500
600
On-state current - (A)
Fig.19 Turn-off energy vs on-state current
Cs = 1.5µF
Cs = 2.0µF
700
800
12.0
11.0
Conditions:
Cs = 1.0µF
dI_GQ/dt = 15A/µs
10.0
9.0
T_j = 125˚C
T_j = 25˚C
8.0
7.0
6.0
5.0
4.0
0
100
200
300
400
500
600
On-state current - (A)
Fig.20 Gate storage time vs on-state current
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