DG306AE25 Datasheet, PDF (16/19 Pages) Dynex Semiconductor – Gate Turn-off Thyristor

DG306AE25
1600
T_j = 125˚C
1400
T_j = 25˚C
1200
Conditions:
I_T = 600A
Cs = 1.0µF
1000
800
0
5 10 15 20 25 30 35 40
Rate of rise of reverse gate current dI_GQ/dt - (A/µs)
Fig.27 Turn-off gate charge vs rate of rise or reverse gate current
3000
V_D =1500V
1000
16/19
100
50
10
1
10
Gate cathode resistance R_GK - (Ohms)
Fig.28 Typical rate of rise of off-state voltage vs gate cathode resistance