DG306AE25 Datasheet, PDF (13/19 Pages) Dynex Semiconductor – Gate Turn-off Thyristor

DG306AE25
17.5
T_j = 125˚C
15.0
12.5
10.0
T_j = 25˚C
7.5
Conditions:
I_T = 600A
Cs = 1.0µF
5.0
10 15 20 25 30 35 40 45 50
Rate of rise of reverse gate current dI_GQ/dt - (A/µs)
Fig.21 Gate storage time vs rate of rise of reverse gate current
2.0
Conditions:
Cs = 1.0µF
dI_GQ/dt = 15A/µs
1.5
T_j = 125˚C
1.0
T_j = 25˚C
0.5
0.0
0
100
200
300
400
500
600
On-state current - (A)
Fig.22 Gate fall time vs on-state current
13/19