DG306AE25 Datasheet, PDF (8/19 Pages) Dynex Semiconductor – Gate Turn-off Thyristor

DG306AE25
600
Conditions:
500
T_j = 125˚C
I_FGM = 20A
Cs = 1.0µF
400 Rs = 10 Ohms
dI_T/dt = 300A/µs
300 _{VD = 2000V}
200 ^V_D ^{= 1500V}
100 ^{VD = 1000V}
0
0
100
200
300
400
500
600
On-state current - (A)
Fig.10 Turn-on energy vs on-state current
700
550
Conditions:
Conditions:
650
I_T = 600A
T_j = 125˚C
500
I_T = 600A
T_j = 125˚C
Cs = 1.0µF
Cs = 1.0µF
600
Rs = 10 Ohms
450 Rs = 10 Ohms
dI_T/dt = 300A/µs
I_FGM = 20A
V_D = 2000V
550
dI_FG/dt = 20A/µs
400
500
350
V_D = 1500V
450
300
V_D = 2000V
400
250
V_D = 1000V
350
V_D = 1500V
200
300
150
250
V_D = 1000V
100
200
0
10 20 30 40 50 60 70 80
Peak forward gate current I_FGM- (A)
50
0 50 100 150 200 250 300
Rate of rise of on-state current dI_T/dt - (A/µs)
Fig.11 Turn-on energy vs peak forward gate current
Fig.12 Turn-on energy vs rate of rise of on-state current
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