DG306AE25 Datasheet, PDF (4/19 Pages) Dynex Semiconductor – Gate Turn-off Thyristor

DG306AE25
CURVES
2.0
2.0
1.5
1.5
1.0
1.0
0.5
V_{GT 0.5}
I_GT
0
0
-50 -25 0 25 50 75 100 125
Junction temperature T_j - (˚C)
Fig.1 Gate trigger voltage/curremt vs junction temperature
2000
1500
Measured under pulse
conditions
I_G(ON) = 2A
Half sine wave 10ms
1000
T_j = 25˚C
T_j = 125˚C
500
0
0
1.0
2.0
3.0
4.0
5.0
6.0
Instantaneous on-state voltage - (V)
Fig.2 Maximum limit on-state characteristics
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