DG306AE25 Datasheet, PDF (15/19 Pages) Dynex Semiconductor – Gate Turn-off Thyristor

DG306AE25
300
Conditions:
I_T = 600A
Cs = 1.0µF
250
200
T_j = 125˚C
T_j = 25˚C
150
100
10 15 20 25 30 35 40 45 50
Rate of rise of reverse gate current dI_GQ/dt - (A/µs)
Fig.25 Reverse gate current vs rate of rise of reverse gate current
1375
Conditions:
1250
V_DM = 1500V
dI_GQ/dt = 15A/µs
1125
1000
875
750
T_j = 125˚C
T_j = 25˚C
625
500
375
250
125
0
100
200
300
400
500
600
On-state current - (A)
Fig.26 Turn-off gatecharge vs on-state voltage
15/19