DG306AE25 Datasheet, PDF (5/19 Pages) Dynex Semiconductor – Gate Turn-off Thyristor

1000
750
Conditions:
T_j = 125˚C,
V_DM = 1500V
dI_GQ/dt = 15A/µs
DG306AE25
500
250
0
0.075
0.5
1.0
1.5
2.0
Snubber capacitance Cs - (µF)
Fig.3 Dependence of I_TCM on Cs
dc
0.050
0.025
0
0.001
0.01
0.1
1.0
10
Time - s
Fig.4 Maximum (limit) transient thermal impedance - double side cooled
12.5
10.0
7.5
5.0
2.5
0
0.0001
0.001
0.01
0.1
1.0
Pulse duration - (s)
Fig.5 Surge (non-repetitive) on-state current vs time
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