DG306AE25 Datasheet, PDF (1/19 Pages) Dynex Semiconductor – Gate Turn-off Thyristor

Replaces March 1998 version, DS4089 - 3.2
DG306AE25
DG306AE25
Gate Turn-off Thyristor
DS4099-4.0 January 2000
APPLICATIONS
s Variable speed A.C. motor drive inverters (VSD-AC)
s Uninterruptable Power Supplies
s High Voltage Converters
s Choppers
s Welding
s Induction Heating
s DC/DC Converters
KEY PARAMETERS
I_TCM
V_DRM
I_T(AV)
dV_D/dt
di_T/dt
600A
2500V
225A
1000V/µs
300A/µs
FEATURES
s Double Side Cooling
s High Reliability In Service
s High Voltage Capability
s Fault Protection Without Fuses
s High Surge Current Capability
s Turn-off Capability Allows Reduction In Equipment
Size And Weight. Low Noise Emission Reduces Acoustic
Cladding Necessary For Environmental Requirements
VOLTAGE RATINGS
Outline type code: E.
See Package Details for further information.
Type Number
DG306AE25
Repetitive Peak Off-state Voltage Repetitive Peak Reverse Voltage
V
DRM
V
V
RRM
V
2500
16
Conditions
T_vj = 125^oC, I_DM = 50mA,
I_RRM = 50mA, V_RG = 2V
CURRENT RATINGS
Symbol
Parameter
Conditions
Max.
I_TCM
I
T(AV)
I
T(RMS)
Repetitive peak controllable on-state current V_D = 67%V_DRM, T_j = 125^oC, di_GQ/dt =15A/µs, Cs = 1.0µF 600
Mean on-state current
T_HS = 80^oC. Double side cooled. Half sine 50Hz.
225
RMS on-state current
T = 80^oC. Double side cooled. Half sine 50Hz.
350
HS
Units
A
A
A
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