DG306AE25 Datasheet, PDF (7/19 Pages) Dynex Semiconductor – Gate Turn-off Thyristor

DG306AE25
400
Conditions:
350
T_j = 25˚C
I_FGM = 20A
Cs = 1.0µF
300 Rs = 10 Ohms
dI/dt = 300A/µs
250 ^dIFG^{/dt = 20A/µs}
V_D = 2000V
V_D = 1500V
200
V_D = 1000V
150
100
50
0
0
100
200
300
400
500
600
On-state current - (A)
Fig.8 Turn-on energy vs on-state current
500
450
400
350
V_D = 2000V
300
250
V_D = 1500V
200
V_D = 1000V
Conditions:
150 _{IT = 600A, Tj = 25˚C, Cs = 1.0µF,}
Rs = 10 Ohms, dI_T/dt = 300A/µs, dI_FG/dt = 20A/µs
100
0 10 20 30 40 50 60 70 80
Peak forward gate current I_FGM- (A)
Fig.9 Turn-on energy vs peak forward gate current
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