LUPA-4000 Datasheet, PDF (6/49 Pages) Cypress Semiconductor – 4M Pixel CMOS Image Sensor

LUPA-4000
Data Sheet
2 Specifications
2.1 General specifications
Table 1: General specifications
Parameter
Pixel
architecture
Pixel size
Resolution
Pixel rate
Shutter type
Full frame rate
Specification
6T-pixel
12 µm x 12 µm
2048 x2048
66 MHz
Pipelined snapshot
shutter
15 frames/second
Remarks
Based on the high fill-factor active pixel sensor
technology of FillFactory
The resolution and pixel size results in a 24,6 mm x
24,6mm optical active area.
Using a 33 MHz system clock and 1 or 2 parallel
outputs.
Full snapshot shutter (integration during read out is
possible).
Frame rate increase possible with ROI read out and/or
sub sampling.
2.2 Electro-optical specifications
2.2.1 Overview
Table 2: Electro-optical specifications
Parameter
FPN
PRNU
Conversion gain
Output
signal
amplitude
Saturation charge
Sensitivity
Peak QE * FF
Peak SR * FF
Specification
<1.25 % RMS
<2.5% RMS
13.5 uV/electron
1V
80.000 e-
2090 V.m2/W.s
11.61 V/lux.s
37.5 %
0.19 A/W
Dark current (@ 21 <140 mV/s
°C)
or 10000 e-/s
Noise
electrons < 40 e-
Remarks
of max. output swing
at 25% and 75% (% of the signal)
@ output (measured).
Converted by 2 on-chip 10-bit ADC’s in 2x10 parallel
digital outputs. Or to be used with external ADC’s
Average white light.
Visible band only (180 lx = 1 W/m2).
Average QE*FF = 35%.
Average SR*FF = 0.15 A/W.
See spectral response curve.
S/N ratio
Spectral sensitivity
range
Parasitic sensitivity
2000:1
400 – 1000 nm
< 1/5000
MTF
Power dissipation
64%
<200 mWatt
66 dB.
I.e. sensitivity of the storage node during read out (after
integration).
Typical (without ADC’s).
Cypress Semiconductor Corporation
3901 North First Street
San Jose, CA 95134
408-943-2600
Contact: [e-mail] Document #: 38-05712 Rev.**(Revision 1.2 )
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