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AM188ES-40KCW Datasheet, PDF (77/102 Pages) Advanced Micro Devices – High Performance, 80C186-/80C188-Compatible and 80L186-/80L188-Compatible, 16-Bit Embedded Microcontrollers
PRELIMINARY
SWITCHING CHARACTERISTICS over COMMERCIAL operating ranges
PSRAM Write Cycle (20 MHz and 25 MHz)
Parameter
20 MHz
No. Symbol
Description
Min
General Timing Responses
5
tCLAV AD Address Valid Delay and BHE
7
tCLDV Data Valid Delay
8
tCHDX Status Hold Time
9
tCHLH ALE Active Delay
10
tLHLL ALE Width
11 tCHLL ALE Inactive Delay
20 tCVCTV Control Active Delay 1(b)
23 tLHAV ALE High to Address Valid
80 tCLCLX LCS Inactive Delay
81 tCLCSL LCS Active Delay
84 tLRLL LCS Precharge Pulse Width
Write Cycle Timing Responses
0
0
0
tCLCL – 10 = 40
0
20
0
0
tCLCL + tCLCH – 3
30 tCLDOX Data Hold Time
31 tCVCTX Control Inactive Delay(b)
32 tWLWH WR Pulse Width
33 tWHLH WR Inactive to ALE High(a)
34 tWHDX Data Hold after WR(a)
65 tAVWL A Address Valid to WR Low
0
0
2tCLCL – 10 = 90
tCLCH – 2
tCLCL – 10 = 40
tCLCL + tCHCL
–3
68 tCHAV CLKOUTA High to A
0
Address Valid
87 tAVBL A Address Valid to WHB, WLB
Low
tCHCL – 3
Preliminary
25 MHz
Max
Min
25
0
25
0
0
25
tCLCL – 10 = 30
25
25
0
15
25
0
25
0
tCLCL + tCLCH – 3
0
25
0
2tCLCL – 10 = 70
tCLCH –2
tCLCL – 10 = 30
tCLCL + tCHCL
–3
25
0
25
tCHCL – 3
Max
20
20
20
20
20
20
20
20
20
20
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Notes:
All timing parameters are measured at 1.5 V with 50 pF loading on CLKOUTA, unless otherwise noted. All output test conditions
are with CL =50 pF. For switching tests, VIL=0.45 V and VIH =2.4 V, except at X1 where VIH =VCC – 0.5 V.
a Testing is performed with equal loading on referenced pins.
b This parameter applies to the DEN, WR, WHB, and WLB signals.
Am186/188ES and Am186/188ESLV Microcontrollers
77