W9864G6DB Datasheet, PDF (15/48 Pages) Winbond – 1M x 4 BANKS x 16 BITS SDRAM

W9864G6DB
DC Characteristics
(VDD = 3.6V ~2.7V, TA = 0°~70°C)
PARAMETER
Operating Current
tCK = min., tRC = min.
Active precharge command cycling without
burst operation
1 bank operation
Standby Current
tCK = min., CS = VIH
VIH/L = VIH (min.)/ VIL (max.)
CKE = VIH
Bank: Inactive State
CKE = VIL (Power
Down mode)
Standby Current
CLK = VIL, CS = VIH
VIH/L=VIH (min.)/VIL (max.)
CKE = VIH
BANK: Inactive State
CKE = VIL (Power
Down mode)
No Operating Current
tCK = min., CS = VIH (min.)
CKE = VIH
BANK: active state (4 banks)
CKE = VIL (Power
Down mode)
Burst Operating Current
Read/Write command cycling
(tCK = min.)
Auto Refresh Current
Auto refresh command cycling
(tCK = min.)
Self Refresh Current
(CKE = 0.2V)
Self refresh mode
SYM.
ICC1
ICC2
ICC2P
ICC2S
ICC2PS
ICC3
ICC3P
ICC4
ICC5
ICC6
ICC6L
-7
MAX.
80
30
1
8
1
55
5
145
110
1
400
UNIT
NOTES
3
3
3
mA
3, 4
3
mA
µA
PARAMETER
Input Leakage Current
(0V ≤ VIN ≤ VDD, all other pins not under test = 0V)
Output Leakage Current
(Output disable, 0V ≤ VOUT ≤ VDDQ)
LVTTL Output ^″H^″ Level Voltage
(IOUT = -2 mA)
LVTTL Output ^"L^″ Level Voltage
(IOUT = 2 mA)
SYMBOL
II(L)
VO(L)
VOH
VOL
MIN.
-5
-5
2.4
-
MAX.
5
5
-
0.4
UNIT
µA
µA
V
V
NOTES
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Publication Release Date: January 27, 2003
Revision A1