W9864G6DB Datasheet, PDF (14/48 Pages) Winbond – 1M x 4 BANKS x 16 BITS SDRAM

W9864G6DB
8. DC CHARACTERISTICS
Absolute Maximum Rating
PARAMETER
SYM.
RATING
UNIT
NOTES
Input, Column Output Voltage
VIN, VOUT
-0.3 − VDD +0.3
V
1
Power Supply Voltage
VDD, VDDQ
-0.3 − 4.6
V
1
Operating Temperature
TOPR
0 − 70
°C
1
Storage Temperature
TSTG
-55 − 150
°C
1
Soldering Temperature (10s)
TSOLDER
260
°C
1
Power Dissipation
PD
1
W
1
Short Circuit Output Current
IOUT
50
mA
1
Note: Exposure to conditions beyond those listed under Absolute Maximum Ratings may adversely affect the life and reliability
of the device.
Recommended DC Operating Conditions
(TA = 0 to 70°C)
PARAMETER
SYM.
Power Supply Voltage
Power Supply Voltage (for I/O Buffer)
Input High Voltage
Input Low Voltage
VDD
VDDQ
VIH
VIL
Note: VIH (max.) = VDD/VDDQ +1.2V for pulse width < 5 nS
VIL (min.) = VSS/VSSQ -1.2V for pulse width < 5 nS
MIN.
2.7
2.7
2.0
-0.3
TYP.
3.3
3.3
-
-
MAX.
3.6
3.6
VDD +0.3
0.8
UNIT
V
V
V
V
NOTES
2
2
2
2
Capacitance
(VDD = 3.3V, TA = 25 °C, f = 1 MHz)
PARAMETER
Input Capacitance
(A0 to A11, BS0, BS1, CS , RAS , CAS , WE , DQM, CKE)
Input Capacitance (CLK)
Input/Output capacitance (DQ0 − DQ15)
Note: These parameters are periodically sampled and not 100% tested
SYM.
Ci
CCLK
Co
MIN.
2.5
2.5
4
MAX. UNIT
4
pF
4
pF
6.5
pF
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