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| 30-FT12NMA160SH02-M669F28 Datasheet, PDF (9/32 Pages) Vincotech – Reactive power capability | |||
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30-FT12NMA160SH02-M669F28
datasheet
Buck Characteristics
figure 17.
Typical rate of fall of forward
and reverse recovery current as a
function of collector current
dI 0/dt ,dI rec/dt = f(I c)
16000
14000
dI0/dt T
dIrec/dt T
12000
10000
8000
6000
4000
2000
0
0
50
100
150
200
At
Tj =
V CE =
V GE =
R gon =
25/125 °C
350
V
±15
V
4
â¦
FWD
figure 18.
Typical rate of fall of forward
and reverse recovery current as a
function of IGBT turn on gate resistor
dI 0/dt ,dI rec/dt = f(R gon)
30000
25000
dI0/dt T
dIrec/dt T
FWD
20000
15000
10000
5000
250 I C (A) 300
0
0
4
8
At
Tj =
VR =
IF =
V GE =
25/125 °C
350
V
150
A
±15
V
12
16 R gon ( â¦) 20
figure 19.
IGBT transient thermal impedance
as a function of pulse width
Z th(j-s) = f(t p)
100
IGBT
figure 20.
FWD transient thermal impedance
as a function of pulse width
Z th(j-s) = f(t p)
100
FWD
10-1
10-1
D = 0,5
D = 0,5
10-2
0,2
10-2
0,2
0,1
0,1
0,05
0,05
0,02
0,02
0,01
0,01
0,005
0,005
0,000
0,000
10-3
10-3
10-5
10-4
10-3
10-2
10-1
100 t p (s)
101
10-5
10-4
10-3
10-2
10-1
100
t p (s) 101
At
D=
R th(j-s) =
tp / T
0,22
K/W
At
D=
R th(j-s) =
tp / T
0,73
K/W
IGBT thermal model values
FWD thermal model values
R (K/W)
8,1E-02
5,7E-02
7,2E-02
2,1E-02
8,0E-03
Tau (s)
2,3E+00
2,9E-01
4,6E-02
1,3E-02
1,5E-03
R (K/W)
6,7E-02
7,9E-02
1,9E-01
2,8E-01
6,1E-02
5,6E-02
Tau (s)
4,1E+00
9,3E-01
1,4E-01
3,5E-02
6,8E-03
1,2E-03
copyright Vincotech
9
27 Jun. 2016 / Revision 3
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