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| 30-FT12NMA160SH02-M669F28 Datasheet, PDF (3/32 Pages) Vincotech – Reactive power capability | |||
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Parameter
Buck Sw. Protection Diode
Forward voltage
Threshold voltage (for power loss calc. only)
Slope resistance (for power loss calc. only)
Reverse current
Thermal resistance junction to sink
Buck Switch
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current incl. Diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy loss
Turn-off energy loss
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Thermal resistance junction to sink
Buck Diode
Diode forward voltage
Peak reverse recovery current
Reverse recovery time
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovered energy
Thermal resistance junction to sink
30-FT12NMA160SH02-M669F28
datasheet
Characteristic Values
Symbol
Conditions
V GE [V]
V GS [V]
V r [V]
V CE [V]
V DS [V]
I C [A]
I F [A]
I D [A]
T j [°C]
Value
Unit
Min Typ Max
VF
V to
rt
Ir
R th(j-s)
phase-change
material
λ = 3,4 W/mK
7
7
7
1200
25
#VALUE! #VALUE! #VALUE!
V
125
#VALUE! #VALUE! #VALUE!
25
#VALUE! #VALUE! #VALUE!
V
125
#VALUE! #VALUE! #VALUE!
25
#VALUE! #VALUE! #VALUE!
mâ¦
125
#VALUE! #VALUE! #VALUE!
25
#VALUE! #VALUE! #VALUE!
mA
#VALUE! #VALUE!
#VALUE! #VALUE! #VALUE!
K/W
V GE(th)
V CEsat
I CES
I GES
R gint
t d(on)
tr
t d(off)
tf
E on
E off
C ies
C oss
C rss
QG
R th(j-s)
V CE = V GE
R goff = 4 â¦
R gon = 4 â¦
f = 1 MHz
phase-change
material
λ = 3,4 W/mK
15
0
20
±15
0
15
1200
0
350
25
960
0,006
25
160
25
125
25
25
25
125
25
125
25
150
125
25
125
25
125
25
125
25
160
VF
I RRM
t rr
Q rr
R gon = 4 â¦
( di rf/dt )max
E rec
R th(j-s)
phase-change
material
λ = 3,4 W/mK
±15
350
100
150
25
125
25
125
25
125
25
125
25
125
25
125
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740
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V
V
mA
nA
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ns
mWs
pF
nC
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K/W
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V
A
ns
µC
A/µs
mWs
K/W
copyright Vincotech
3
27 Jun. 2016 / Revision 3
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