30-FT12NMA160SH02-M669F28 Datasheet, PDF (15/32 Pages) Vincotech – Reactive power capability

figure 9.
Typical switching times as a
function of collector current
t = f(I _C)
1,00
0,10
0,01
30-FT12NMA160SH02-M669F28
datasheet
Boost Characteristics
IGBT
figure 10.
Typical switching times as a
function of gate resistor
t = f(R _G)
1,00
t_doff
t_don
0,10
t_f
t_r
0,01
IGBT
t_doff
t_don
t_r
t_f
0,00
0
50
100
With an inductive load at
T_j =
125
°C
V _CE =
350
V
V _GE =
±15
V
R _gon =
4
Ω
R _goff =
4
Ω
figure 11.
Typical reverse recovery time as a
function of collector current
t _rr = f(I _c)
0,12
0,09
0,06
0,03
0,00
0
50
100
At
T_j =
V _CE =
V _GE =
R _gon =
25/125 °C
350
V
±15
V
4
Ω
150
I C (A)
200
0,00
0
4
8
With an inductive load at
T_j =
125
°C
V _CE =
350
V
V _GE =
±15
V
I_C =
100
A
12
16 _{R G ( Ω)} 20
FWD
t_{rr High T}
t_{rr Low T}
150
I C (A) ²⁰⁰
figure 12.
Typical reverse recovery time as a
function of IGBT turn on gate resistor
t _rr = f(R _gon)
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0
0
4
8
12
At
T_j =
V_R =
I_F =
V _GE =
25/125 °C
350
V
100
A
±15
V
FWD
t_{rr High T}
t_{rr Low T}
16 _{R gon ( Ω)} 20
copyright Vincotech
15
27 Jun. 2016 / Revision 3