30-FT12NMA160SH02-M669F28 Datasheet, PDF (16/32 Pages) Vincotech – Reactive power capability

30-FT12NMA160SH02-M669F28
datasheet
Boost Characteristics
figure 13.
Typical reverse recovery charge as a
function of collector current
Q _rr = f(I _C)
18
15
FWD
Q_{rr High T}
12
Q_{rr Low T}
9
6
3
0
0
At
50
100
At
T_j =
V _CE =
V _GE =
R _gon =
25/125 °C
350
V
±15
V
4
Ω
150
200
I C (A)
figure 14.
Typical reverse recovery charge as a
function of IGBT turn on gate resistor
Q _rr = f(R _gon)
15
12
9
6
3
0
0
4
8
12
At
T_j =
V_R =
I_F =
V _GE =
25/125 °C
350
V
100
A
±15
V
figure 15.
Typical reverse recovery current as a
function of collector current
I _RRM = f(I _C)
180
150
120
FWD
I_{RRM High T}
I_{RRM Low T}
90
60
30
0
0
50
100
At
T_j =
V _CE =
V _GE =
R _gon =
25/125 °C
350
V
±15
V
4
Ω
150
I C (A) ²⁰⁰
figure 16.
Typical reverse recovery current as a
function of IGBT turn on gate resistor
I _RRM = f(R _gon)
200
160
120
80
40
0
0
4
8
12
At
T_j =
V_R =
I_F =
V _GE =
25/125 °C
350
V
100
A
±15
V
FWD
Q_{rr High T}
Q_{rr Low T}
16 _{R gon ( Ω)} 20
FWD
I_{RRM High T}
I_{RRM Low T}
16
R gon ( Ω) ²⁰
copyright Vincotech
16
27 Jun. 2016 / Revision 3