30-FT12NMA160SH02-M669F28 Datasheet, PDF (6/32 Pages) Vincotech – Reactive power capability

30-FT12NMA160SH02-M669F28
datasheet
Buck Characteristics
figure 5.
Typical switching energy losses
as a function of collector current
E = f(I _C)
12
10
8
6
4
2
0
0
50
100
150
200
With an inductive load at
T_j =
V _CE =
V _GE =
25/125 °C
350
V
±15
V
R _gon =
4
Ω
R _goff =
4
Ω
IGBT
E_{off High T}
E_{on High T}
E_{off Low T}
E_{on Low T}
250 _{I C (A)} 300
figure 6.
Typical switching energy losses
as a function of gate resistor
E = f(R _G)
12
10
8
6
4
2
0
0
4
8
12
With an inductive load at
T_j =
V _CE =
V _GE =
25/125 °C
350
V
±15
V
I_C =
150
A
figure 7.
Typical reverse recovery energy loss
as a function of collector current
E _rec = f(I _c)
1,6
1,2
FWD
E_{rec High T}
figure 8.
Typical reverse recovery energy loss
as a function of gate resistor
E _rec = f(R _G)
1,6
1,2
IGBT
E_{on High T}
E_{on Low T}
E_{off High T}
E_{off Low T}
16 _{R G ( Ω)} 20
FWD
0,8
0,8
E_{rec High T}
0,4
E_{rec Low T}
0,4
0
0
50
100
150
200
250
300
I C (A)
E_{rec Low T}
0
0
4
8
12
16
20
R G ( Ω)
With an inductive load at
T_j =
V _CE =
V _GE =
25/125 °C
350
V
±15
V
R _gon =
4
Ω
With an inductive load at
T_j =
V _CE =
V _GE =
25/125 °C
350
V
±15
V
I_C =
150
A
copyright Vincotech
6
27 Jun. 2016 / Revision 3