30-FT12NMA160SH02-M669F28 Datasheet, PDF (27/32 Pages) Vincotech – Reactive power capability

30-FT12NMA160SH02-M669F28
datasheet
Boost Switching Characteristics
General conditions
T_j
R _gon
R _goff
= 125 °C
= 4Ω
= 4Ω
figure 1.
IGBT
Turn-off Switching Waveforms & definition of t _doff, t _Eoff
(t _{E off} = integrating time for E _off)
125
%
t_doff
V_CE
100
V_{GE 90%}
V_{CE 90%}
75
V_GE
I_C
50
t_Eoff
25
I_{C 1%}
0
-25
-0,1
0
0,1
0,2
0,3
0,4
0,5
time (µs)
V _GE (0%) =
V _GE (100%) =
V _C (100%) =
I _C (100%) =
t _doff =
t _{E off} =
-15
V
15
V
350
V
100
A
0,18
µs
0,44
µs
figure 2.
IGBT
Turn-on Switching Waveforms & definition of t _don, t _Eon
(t _{E on} = integrating time for E _on)
250
%
I_C
200
150
V_CE
100
50
V_{GE 10%}
0
-50
2,95
3
V _GE (0%) =
V _GE (100%) =
V _C (100%) =
I _C (100%) =
t _don =
t _{E on} =
t_don
I_{C 10%}
t_Eon
V_GE
V_{CE 3%}
3,05
3,1
3,15
3,2 _{time(µs)3,25}
-15
V
15
V
350
V
100
A
0,10
µs
0,15
µs
figure 3.
Turn-off Switching Waveforms & definition of t _f
125
%
I_C
100
fitted
I_{c 90%}
75
I_{c 60%}
50
I_{c 40%}
25
V_CE
0
I_{c 10%}
t_f
IGBT
figure 4.
Turn-on Switching Waveforms & definition of t _r
250
%
I_c
200
IGBT
150
V_CE
100
50
0
I_{C 90%}
t_r
I_{C 10%}
-25
0,00
0,05
0,10
0,15
0,20
0,25
0,30
time (µs)
V _C (100%) =
I _C (100%) =
t_f =
350
V
100
A
0,064 µs
-50
3,05
V _C (100%) =
I _C (100%) =
t_r =
3,1
3,15
350
V
100
A
0,019 µs
3,2
time(µs)
copyright Vincotech
27
27 Jun. 2016 / Revision 3