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30-FT12NMA160SH02-M669F28 Datasheet, PDF (17/32 Pages) Vincotech – Reactive power capability
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30-FT12NMA160SH02-M669F28
datasheet
Boost Characteristics
figure 17.
Typical rate of fall of forward
and reverse recovery current as a
function of collector current
dI 0/dt ,dI rec/dt = f(I c)
10000
dI0/dt T
dIrec/dt T
8000
6000
4000
2000
0
0
50
100
At
Tj =
V CE =
V GE =
R gon =
25/125 °C
350
V
±15
V
4
Ω
figure 19.
IGBT transient thermal impedance
as a function of pulse width
Z th(j-s) = f(t p)
101
FWD
figure 18.
Typical rate of fall of forward
and reverse recovery current as a
function of IGBT turn on gate resistor
dI 0/dt ,dI rec/dt = f(R gon)
18000
15000
dI0/dt T
dIrec/dt T
FWD
12000
9000
6000
3000
150
I C (A) 200
IGBT
0
0
4
8
12
At
Tj =
VR =
IF =
V GE =
25/125 °C
350
V
100
A
±15
V
figure 20.
FWD transient thermal impedance
as a function of pulse width
Z th(j-s) = f(t p)
101
16 R gon ( Ω) 20
FWD
100
100
10-1
10-2
10-3
10-5
10-4
10-3
10-2
At
D=
R th(j-s) =
tp / T
0,48
K/W
IGBT thermal model values
R (K/W)
1,1E-01
8,8E-02
1,2E-01
1,7E-01
3,0E-02
Tau (s)
2,9E+00
4,6E-01
9,5E-02
2,5E-02
4,4E-03
10-1
D = 0,5
0,2
0,1
0,05
10-2
0,02
0,01
0,005
0,000
10-3
10-1
100
t p (s) 101 10
10-5
10-4
10-3
10-2
At
D=
R th(j-s) =
tp / T
0,68
K/W
FWD thermal model values
R (K/W) Tau (s)
6,8E-02 3,7E+00
1,0E-01 5,4E-01
2,0E-01 9,8E-02
2,6E-01 2,8E-02
6,8E-02 4,9E-03
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0,000
10-1
100
t p (s) 101 10
copyright Vincotech
17
27 Jun. 2016 / Revision 3
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