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| 30-FT12NMA160SH02-M669F28 Datasheet, PDF (11/32 Pages) Vincotech – Reactive power capability | |||
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figure 25.
Safe operating area as a function
of collector-emitter voltage
I C = f(V CE)
103
102
101
100
10-1
100
101
102
At
D=
Ts =
V GE =
Tj =
single pulse
80
ºC
±15
V
T jmax
30-FT12NMA160SH02-M669F28
datasheet
Buck Characteristics
IGBT
100uS
1mS
10mS
100mS
DC
103
V CE (V)
figure 26.
Gate voltage vs Gate charge
V GE = f(Q g)
17,5
IGBT
15
240 V
12,5
960 V
10
7,5
5
2,5
0
0
100
200
300
400
500
600
700
800
Q g (nC)
At
IC =
160
A
T j=
25
ºC
figure 27.
Short circuit withstand time as a function of
gate-emitter voltage
t sc = f(V GE)
50
IGBT
figure 28.
IGBT
Typical short circuit collector current as a function of
gate-emitter voltage
I C(sc) = f(V GE)
1200
1000
40
800
30
600
20
400
10
200
0
0
10
12
14
16
18
V GE(V) 20
10
12
14
At
V CE =
600
V
Tj â¤
175
ºC
At
V CE â¤
600
V
Tj =
175
ºC
16
V GE (V) 18
copyright Vincotech
11
27 Jun. 2016 / Revision 3
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