30-FT12NMA160SH02-M669F28 Datasheet, PDF (14/32 Pages) Vincotech – Reactive power capability

30-FT12NMA160SH02-M669F28
datasheet
Boost Characteristics
figure 5.
Typical switching energy losses
as a function of collector current
E = f(I _C)
6
5
IGBT
E_{off High T}
4
E_{off Low T}
3
E_{on High T}
2
E_{on Low T}
1
0
0
50
100
With an inductive load at
T_j =
V _CE =
V _GE =
25/125 °C
350
V
±15
V
R _gon =
4
Ω
R _goff =
4
Ω
figure 7.
Typical reverse recovery energy loss
as a function of collector current
E _rec = f(I _c)
5
4
3
150
200
I C (A)
FWD
E_{rec High T}
E_{rec Low T}
figure 6.
Typical switching energy losses
as a function of gate resistor
E = f(R _G)
6
5
4
3
2
1
0
0
4
8
12
With an inductive load at
T_j =
V _CE =
V _GE =
25/125 °C
350
V
±15
V
I_C =
100
A
figure 8.
Typical reverse recovery energy loss
as a function of gate resistor
E _rec = f(R _G)
5
4
3
2
2
1
1
0
0
50
100
With an inductive load at
T_j =
25/125 °C
V _CE =
350
V
V _GE =
±15
V
R _gon =
4
Ω
0
150
I C (A)
200
0
4
8
12
With an inductive load at
T_j =
25/125 °C
V _CE =
350
V
V _GE =
±15
V
I_C =
100
A
IGBT
E_{on High T}
E_{on Low T}
E_{off High T}
E_{off Low T}
16
R G ( Ω) ²⁰
FWD
E_{rec High T}
E_{rec Low T}
16
R G ( Ω) ²⁰
copyright Vincotech
14
27 Jun. 2016 / Revision 3