30-FT12NMA160SH02-M669F28 Datasheet, PDF (20/32 Pages) Vincotech – Reactive power capability

30-FT12NMA160SH02-M669F28
datasheet
Boost Characteristics
figure 25.
Reverse bias safe operating area
I _C = f(V _CE)
250
200
I _{C MAX}
IGBT
150
100
50
0
0
100
200
300
400
500
At
T_j =
T _jmax-25
V _ccminus = V _ccplus
Switching mode :
ºC
3 level switching
figure 27.
Short circuit withstand time as a function of
gate-emitter voltage
t _sc = f(V _GE)
14
600
700
V _CE (V)
IGBT
12
10
8
6
4
2
0
10
11
12
13
14
V GE(V) ¹⁵
At
V _CE =
600
V
T_j ≤
150
ºC
figure 26.
Gate voltage vs Gate charge
V _GE = f(Q _g)
16
IGBT
14
12
120 V
480 V
10
8
6
4
2
0
0
50
100
150
200
250
Q g (nC)
At
I_C =
100
A
T _j=
25
ºC
figure 28.
IGBT
Typical short circuit collector current as a function of
gate-emitter voltage
I _C(sc) = f(V _GE)
1600
1400
1200
1000
800
600
400
200
0
12
14
16
At
V _CE ≤
400
V
T_j =
125
ºC
18
V GE (V) ²⁰
copyright Vincotech
20
27 Jun. 2016 / Revision 3