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30-FT12NMA160SH02-M669F28 Datasheet, PDF (4/32 Pages) Vincotech – Reactive power capability
Parameter
Boost Switch
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off incl diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy loss
Turn-off energy loss
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Thermal resistance junction to sink
Boost Sw. Protection Diode
Diode forward voltage
Thermal resistance junction to sink
Boost Diode
Diode forward voltage
Reverse leakage current
Peak reverse recovery current
Reverse recovery time
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovery energy
Thermal resistance junction to sink
Thermistor
Rated resistance
Deviation of R 100
Power dissipation
Power dissipation constant
B-value
B-value
Vincotech NTC Reference
30-FT12NMA160SH02-M669F28
datasheet
Characteristic Values
Symbol
Conditions
V GE [V]
V GS [V]
V r [V]
V CE [V]
V DS [V]
I C [A]
I F [A]
I D [A]
T j [°C]
Value
Unit
Min Typ Max
V GE(th)
V CEsat
I CES
I GES
R gint
t d(on)
tr
t d(off)
tf
E on
E off
C ies
C oss
C rss
QG
R th(j-s)
V CE = V GE
R goff = 4 Ω
R gon = 4 Ω
f = 1 MHz
phase-change
material
λ = 3,4 W/mK
15
0
20
±15
0
15
650
0
350
25
480
0,0016
25
100
25
125
25
25
25
125
25
125
25
100
125
25
125
25
125
25
125
25
100
VF
R th(j-s)
phase-change
material
λ = 3,4 W/mK
30
25
125
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V
V
mA
nA
Ω
ns
µWs
pF
nC
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K/W
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V
K/W
VF
Ir
I RRM
t rr
Q rr
R gon = 4 Ω
( di rf/dt )max
E rec
R th(j-s)
phase-change
material
λ = 3,4 W/mK
±15
60
1200
350
100
25
150
25
25
150
25
150
25
150
25
150
25
150
R
Δ R/R
P
R 100 = 1486 Ω
B (25/50)
B (25/100)
Tol. ±3%
Tol. ±3%
25
100
25
25
25
25
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V
µA
A
ns
µC
A/µs
mWs
K/W
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Ω
-12
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+12
%
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mW
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K
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K
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copyright Vincotech
4
27 Jun. 2016 / Revision 3