10-FY12B2A040MR-L387L68 Datasheet, PDF (9/18 Pages) Vincotech – Compact and low inductive design

10-FY12B2A040MR-L387L68
datasheet
Boost Switching Characteristics
figure 1.
Typical swit ching energy losses as a f unction of drain current
E = f(I D)
0,8
0,6
MOSFET
E_on
E_off
E_on
E_off
figure 2.
Typical swit ching energy losses as a f unct ion of gate resistor
E = f(R g)
1,6
1,2
0,4
0,8
0,2
0,4
MOSFET
E_{o n}
E_on
E_off
E_{o ff}
0
0
8
16
24
With an induc tive load at
V DS =
700
V
V GS = +16/0 V
R gon =
4
Ω
R goff =
4
Ω
32
40
48
25 °C
T j:
125 °C
figure 3.
Typical reverse recovered energy loss as a f unction of drain current
E rec = f(I D)
0,12
56
64
I_D (A)
FWD
0
0
2
4
6
With an inductive load at
V DS =
700
V
V GS = +16/0 V
ID =
32
A
8
10
12
14
16_{Rg ( Ω)} 18
25 °C
T j:
125 °C
figure 4.
Typical reverse recovered energy loss as a f unct ion of gat e resist or
E rec = f(R g)
0,08
FWD
0,09
0,06
0,03
E_rec
E_rec
0,06
0,04
0,02
E_rec
E_rec
0
0
8
16
24
With an induc tive load at
V DS =
700
V
V GS = +16/0 V
R gon =
4
Ω
32
40
48
25 °C
T j:
125 °C
56
64
I _D (A)
0
0
2
4
6
With an inductive load at
V DS =
700
V
V GS = +16/0 V
ID =
32
A
8
10
12
14
16
18
R_g ( Ω)
25 °C
T j:
125 °C
Copyright Vincotech
9
13 Jul. 2016 / Revision 1