10-FY12B2A040MR-L387L68 Datasheet, PDF (13/18 Pages) Vincotech – Compact and low inductive design

10-FY12B2A040MR-L387L68
datasheet
Boost Switching Definitions
General conditions
Tj
R gon
= 125 °C
= 4Ω
R goff
= 4Ω
figure 1.
MOSFET
Turn-of f Swit ching Wavef orms & def init ion of t dof f , t Eof f (t Eof f = int egrat ing t ime f or Eof f )
125
%
t_doff
100
V_{GS 90%}
75
V_GS
50
t_Eoff
V_{DS 90%}
I_D
25
V_DS
0
I_{D 1%}
-25
-50
figure 2.
Turn-on Swit ching Wavef orms & def init ion of tdon, t Eon (t Eon = int egrating t ime f or Eon)
200
%
I_D
150
MOSFET
V_DS
100
50
t_don
V_{GS 10%}
0
I_{D 10%}
t_Eon
V_GS
V_{DS 3%}
-75
-0,05
-0,03
-0,01
0,01
0,03
V GS (0%) =
V GS (100%) =
V DS (100%) =
I D (100%) =
t doff =
t Eoff =
figure 3.
0
16
700
32
0,071
0,096
Turn-of f Swit ching Wavef orms & def init ion of t f
125
%
I_D
100
fitted
75
V
V
V
A
µs
µs
I_{D 90%}
I_{D 60%}
50
I_{D 40%}
25
V_DS
0
I_D10%
t_f
0,05
-25
-0,02
0
0,02
0,04
0,06
0,08
V DS (100%) =
I D (100%) =
tf =
700
V
32
A
0,005
µs
0,07
0,09
t (µs)
MOSFET
0,1
0,12
t ( µs)
-50
2,98
2,995
3,01
3,025
3,04
V GS (0%) =
V GS (100%) =
V DS (100%) =
I D (100%) =
t don =
t Eon =
figure 4.
0
V
16
V
700
V
32
A
0,015
µs
0,053
µs
Turn-on Swit ching Wavef orms & def init ion of tr
200
%
175
I_D
150
3,055
3,07
3,085
t (µs)
MOSFET
125
V_DS
100
75
t_r
50
I_{D 90%}
25
I_{D 10%}
0
-25
3,01 3,015
V DS (100%) =
I D (100%) =
tr =
3,02
3,025 3,03
700
32
0,007
3,035
V
A
µs
3,04
3,045
3,05
3,055 3,06
t (µs)
Copyright Vincotech
13
13 Jul. 2016 / Revision 1