10-FY12B2A040MR-L387L68 Datasheet, PDF (3/18 Pages) Vincotech – Compact and low inductive design

10-FY12B2A040MR-L387L68
datasheet
Parameter
Boost Switch
Static
Drain-source on-state resistance
Gate-source threshold voltage
Gate to Source Leakage Current
Zero Gate Voltage Drain Current
Internal gate resistance
Gate charge
Gate to source charge
Gate to drain charge
Short-circuit input capacitance
Short-circuit output capacitance
Reverse transfer capacitance
Thermal
Thermal resistance junction to sink
MOSFET Switching
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy (per pulse)
Turn-off energy (per pulse)
Characteristic Values
Symbol
Conditions
VGE [V]
VGS [V]
VCE [V]
VDS [V]
VF [V]
IC [A]
ID [A]
IF [A]
Tj [°C]
Min
Value
Typ
Max
Unit
rDS(on)
VGS(th) VGS = VDS
IGSS
IDSS
rg
Qg
QGS
QGD
Ciss
Coss f = 1 MHz
Crss
25
18
20
125
150
0,01
25
-4/22 0
25
0
1200
25
18
600
20
25
0
800
25
39
50
52
mΩ
60
2,7
5,6
V
±100
nA
10
µA
7
Ω
107
22
nC
41
1337
76
pF
27
Rth(j-s)
phase-change
material
λ = 3,4 W/mK
td(on)
tr
Rgoff = 4 Ω
Rgon = 4 Ω
td(off)
tf
+16/0 700
32
Eon
QrFWD = 0,2 µC
QrFWD = 0,2 µC
Eoff
25
125
25
125
25
125
25
125
25
125
25
125
1,41
16
15
7
7
63
71
7
5
0,397
0,369
0,325
0,364
K/W
ns
mWs
Copyright Vincotech
3
13 Jul. 2016 / Revision 1