10-FY12B2A040MR-L387L68 Datasheet, PDF (1/18 Pages) Vincotech – Compact and low inductive design

flow BOOST 1 dual SiC
Features
● High frequency SiC MOSFET
● Compact and low inductive design
● Solar
Target applications
Types
● 10-FY12B2A040MR-L387L68
10-FY12B2A040MR-L387L68
datasheet
1200 V / 40 mΩ
flow 1 12mm housing
Schematic
Tj = 25 °C, unless otherwise specified
Maximum Ratings
Parameter
Boost Switch
Drain-source voltage
Drain current
Peak drain current
Total power dissipation
Gate-source voltage
Maximum Junction Temperature
Symbol
Condition
VDSS
ID
IDM
Ptot
VGSS
Tjmax
Tj = Tjmax
tp limited by Tjmax
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Value
1200
31
137
68
-4/22
175
Unit
V
A
A
W
V
°C
Copyright Vincotech
1
13 Jul. 2016 / Revision 1