10-FY12B2A040MR-L387L68 Datasheet, PDF (10/18 Pages) Vincotech – Compact and low inductive design

10-FY12B2A040MR-L387L68
datasheet
Boost Switching Characteristics
figure 5.
Typical swit ching t imes as a f unct ion of drain current
t = f(I D)
1
MOSFET
figure 6.
Typical swit ching t imes as a f unct ion of gate resistor
t = f(R g)
1
MOSFET
0,1
t_{d(off )}
t_d(on)
0,01
t_r
t_f
0,001
0
8
16
24
32
40
48
56
64
I _D(A)
With an induc tive load at
Tj =
125
°C
V DS =
700
V
V GS = +16/0 V
R gon =
4
Ω
R goff =
4
Ω
figure 7.
Typical reverse recovery t ime as a f unction of drain current
t rr = f(I D)
0,012
FWD
0,009
t_rr
t_rr
0,006
0,003
0
0
8
16
24
At
V DS =
700
V
V GS = +16/0 V
R gon =
4
Ω
32
40
48
25 °C
T j:
125 °C
56
64
I_D (A)
t_{d(off )}
0,1
0,01
t_d(on)
t_r
t_f
0,001
0
2
4
6
With an inductive load at
Tj =
125
°C
V DS =
700
V
V GS = +16/0 V
ID =
32
A
8
10
12
14
16
18
R_g (Ω)
figure 8.
Typical reverse recovery t ime as a f unct ion of MOSFET turn on gat e resist or
t rr = f(R gon)
0,01
0,008
FWD
tt_rrrr
0,006
0,004
0,002
0
0
2
4
6
At
VDS =
700
V
V GS = +16/0 V
ID =
32
A
8
10
12
14
16
18
R_{g on} (Ω)
25 °C
T j:
125 °C
Copyright Vincotech
10
13 Jul. 2016 / Revision 1