10-FY12B2A040MR-L387L68 Datasheet, PDF (12/18 Pages) Vincotech – Compact and low inductive design

10-FY12B2A040MR-L387L68
datasheet
Boost Switching Characteristics
figure 13.
Typical rat e of f all of f orward and reverse recovery current as a f unct ion of drain current
di F/dt ,di rr/dt = f(I D)
16000
di_F / dt
di_{r r}/dt
12000
FWD
8000
4000
figure 14.
FWD
Typical rat e of f all of f orward and reverse recovery current as a f unction of MOSFET t urn on gat e resist or
di F/dt ,di rr/dt = f(R gon)
15000
di_F / dt
di _rr/dt
12000
9000
6000
3000
0
0
8
16
24
At
VDS =
700
V
V GS = +16/0 V
R gon =
4
Ω
32
T j:
40
48
25 °C
125 °C
56
64
ID (A)
0
0
2
4
6
At
V DS =
700
V
V GS = +16/0 V
ID =
32
A
8
10
12
14
16
18
Rg on (Ω)
25 °C
T j:
125 °C
Copyright Vincotech
12
13 Jul. 2016 / Revision 1