10-FY12B2A040MR-L387L68 Datasheet, PDF (4/18 Pages) Vincotech – Compact and low inductive design

10-FY12B2A040MR-L387L68
datasheet
Parameter
Boost Diode
Static
Forward voltage
Reverse leakage current
Thermal
Thermal resistance junction to sink
FWD Switching
Peak recovery current
Reverse recovery time
Recovered charge
Reverse recovered energy
Peak rate of fall of recovery current
Bypass Diode
Static
Forward voltage
Reverse leakage current
Thermal
Thermal resistance junction to sink
Capacitor (DC)
Capacitance
Tolerance
Characteristic Values
Symbol
Conditions
VGE [V]
VGS [V]
VCE [V]
VDS [V]
VF [V]
IC [A]
ID [A]
IF [A]
Tj [°C]
Min
Value
Typ
Max
Unit
25
VF
20
125
IR
1200
25
Rth(j-s)
phase-change
material
λ = 3,4 W/mK
IRRM
trr
Qr
di/dt = 6371 A/µs _{+16/0 700}
di/dt = 5717 A/µs
32
Erec
(dirf/dt)max
25
125
25
125
25
125
25
125
25
125
1,43
1,6
V
1,69
400
µA
0,80
27
27
9
9
0,191
0,188
0,057
0,057
10013
9679
K/W
A
ns
µC
mWs
A/µs
VF
Ir
Rth(j-s)
phase-change
material
λ = 3,4 W/mK
C
25
35
125
25
1600
145
0,8
1,17
1,6
1,13
V
50
1100
µA
1,25
K/W
47
nF
-10
+10
%
Copyright Vincotech
4
13 Jul. 2016 / Revision 1