10-FY12B2A040MR-L387L68 Datasheet, PDF (14/18 Pages) Vincotech – Compact and low inductive design

10-FY12B2A040MR-L387L68
datasheet
Boost Switching Definitions
figure 5.
Turn-of f Swit ching Wavef orms & def init ion of t Eof f
125
%
100
75
50
25
V_{GS 90%}
0
-25
t_Eoff
-50
-75
-0,06
-0,035
P off (100%) =
E off (100%) =
t Eoff =
-0,01
22,38
0,36
0,096
0,015
kW
mJ
µs
0,04
MOSFET
I_{D 1% Eoff}
P_off
0,065
0,09
t (µs)
figure 6.
Turn-on Swit ching Wavef orms & def init ion of tEon
150
%
125
P_on
100
MOSFET
E_on
75
50
25
V_{GS 10%}
0
-25
2,99
3
P on (100%) =
E on (100%) =
t Eon =
3,01
3,02
22,38
0,37
0,053
t_Eon
3,03
kW
mJ
µs
3,04
V_{DS 3%}
3,05
3,06
3,07
t ( µs)
figure 7.
Turn-of f Swit ching Wavef orms & def init ion of t rr
150
%
I_F
100
FWD
t_rr
50
V_F
0
-50
-100
3
3,01
V F (100%) =
I F (100%) =
I RRM (100%) =
t rr =
3,02
700
32
- 27
0,009
fitted
I_{RRM 10%}
3,03
I_{RRM 90%}
I_{RRM 100%}
3,04
V
A
A
µs
3,05
3,06
t (µs)
Copyright Vincotech
14
13 Jul. 2016 / Revision 1