10-FY12B2A040MR-L387L68 Datasheet, PDF (11/18 Pages) Vincotech – Compact and low inductive design

10-FY12B2A040MR-L387L68
datasheet
Boost Switching Characteristics
figure 9.
Typical recovered charge as a f unction of drain current
Q r = f(I D)
0,3
0,25
0,2
FWD
Q_r
Q_r
0,15
0,1
0,05
At
0
0
8
16
24
At
VDS =
700
V
V GS = +16/0 V
R gon =
4
Ω
32
40
48
25 °C
T j:
125 °C
56
64
ID (A)
figure 10.
Typical recoved charge as a f unct ion of MOSFET t urn on gate resistor
Q r = f(R gon)
0,25
FWD
0,2
Q_r
Q_r
0,15
0,1
0,05
0
0
2
4
6
At
V DS =
700
V
V GS = +16/0 V
ID =
32
A
8
10
12
14
16
18
Rgon (Ω)
25 °C
T j:
125 °C
figure 11.
Typical peak reverse recovery current current as a f unct ion of drain current
I RM = f(I D)
40
30
FWD
I_RM
I_RM
figure 12.
Typical peak reverse recovery current as a f unct ion of MOSFET t urn on gate resistor
I RM = f(R gon)
40
30
FWD
20
10
0
0
8
16
24
At
VDS =
700
V
V GS = +16/0 V
R gon =
4
Ω
32
40
48
25 °C
T j:
125 °C
56
64
ID (A)
20
I_RM
I_RM
10
0
0
2
4
At
V DS =
700
V GS = +16/0
ID =
32
6
V
V
A
8
10
12
14
16
18
R go n (Ω)
25 °C
T j:
125 °C
Copyright Vincotech
11
13 Jul. 2016 / Revision 1