10-FY12B2A040MR-L387L68 Datasheet, PDF (8/18 Pages) Vincotech – Compact and low inductive design

10-FY12B2A040MR-L387L68
datasheet
Bypass Diode Characteristics
figure 1.
Typical forward characteristics
I F = f(V F)
105
Rectifier Diode
90
75
60
45
30
15
0
0
0,5
tp =
250
1
µs
1,5
T j:
2
2,5
3
VF (V)
25 °C
125 °C
figure 2.
Rectifier Diode
Transient thermal impedance as a function of pulse width
Z th(j-s) = f(t p)
10¹
10⁰
10^-1
10^-2
10^-5
10^-4
10^-3
10^-2
D=
R th(j-s) =
tp / T
1,25
K/W
Diode thermal model values
R (K/W)
8,0030E- 02
τ (s)
5,2210E+00
1,5580E- 01
4,1790E-01
6,9510E- 01
8,8210E-02
2,2330E- 01
3,0740E-02
9,9710E- 02
5,9900E-03
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0,000
10^-1
10⁰
10¹
t _p (s)
Thermistor Characteristics
Thermistor typical temperature characteristic
Typical NTC characteristic
as a function of temperature
R T = f(T )
NTC-typical temperature characteristic
25000
Typical Thermistor resistance values
20000
15000
10000
5000
0
25
50
75
100
125
T (°C)
Copyright Vincotech
8
13 Jul. 2016 / Revision 1