10-FY12B2A040MR-L387L68 Datasheet, PDF (6/18 Pages) Vincotech – Compact and low inductive design

10-FY12B2A040MR-L387L68
datasheet
figure 1.
Typical output characteristics
I D = f(V DS)
140
120
100
80
60
40
20
0
0
2,5
5
tp =
250
µs
V GS=
18
V
Boost Switch Characteristics
MOSFET
7,5
T j:
10
12,5
15
VDS (V)
25 °C
125 °C
150 °C
figure 2.
Typical out put charact eristics
I D= f(V DS)
140
120
100
80
60
VGS :
0V
2V
4V
6V
8V
10 V
12 V
14 V
16 V
18 V
20 V
40
20
0
-20
-40
-15
-10
-5
0
5
tp =
Tj =
V GS from
250
µs
150
°C
0 V to 20 V in steps of 2 V
MOSFET
10
15
VDS (V)
figure 3.
Typical transf er charact erist ics
I D = f(V GS)
35
30
25
20
15
10
5
0
0
tp =
V DS =
2
100
10
4
6
µs
V
MOSFET
8
10
12
25 °C
T j:
125 °C
150 °C
14
16
VGS (V)
figure 4.
Transient t hermal impedance as a f unct ion of pulse widt h
Z th(j-s)= f(t p)
10⁰
MOSFET
10^-1
10^-2
10^-4
10^-3
10^-2
10^-1
10
D=
tp / T
R th(j-s) =
1,41
K/W
MOSFET thermal model values
R (K/W)
τ (s)
1,24E- 01
1,00E+00
3,91E- 01
1,66E- 01
6,76E- 01
6,11E- 02
1,21E- 01
5,50E- 03
9,55E- 02
8,02E- 04
0,5
0,2
0,1
0,05
0,02
0,01
0,005
0
10¹
10²
t p(s)
Copyright Vincotech
6
13 Jul. 2016 / Revision 1