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| 10-FY07BIA041MC-M528E58 Datasheet, PDF (9/25 Pages) Vincotech – Low inductive 12mm flow1 package | |||
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10-FY07BIA041MC-M528E58
preliminary datasheet
Pseudo H-Bridge
Figure 17
Typical rate of fall of forward
and reverse recovery current as a
function of collector current
dI0/dt,dIrec/dt = f(Ic)
12000
dIrec/dt T
dIo/dt T
10000
FWD
Figure 18
Typical rate of fall of forward
and reverse recovery current as a
function of IGBT turn on gate resistor
dI0/dt,dIrec/dt = f(Rgon)
12000
10000
dIrec/dt T
dI0/dt T
FWD
8000
8000
6000
6000
4000
4000
2000
2000
0
0
0
10
20
30
40
50 I C (A) 60
0
5
10
At
Tj =
VCE =
VGE =
Rgon =
25/125 °C
400
V
10
V
2
â¦
At
Tj =
VR =
IF =
VGE =
25/125 °C
400
V
30
A
10
V
15
R gon (â¦)
20
Figure 19
IGBT transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
101
MOSFET
Figure 20
FWD transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
101
FWD
100
100
10-1
10-2
10-5
10-4
10-3
10-2
At
D=
RthJH =
tp / T
0.63
K/W
IGBT thermal model values
R (C/W)
0.04
0.08
0.30
0.14
0.03
0.02
Tau (s)
5.1E+00
1.0E+00
2.1E-01
8.6E-02
1.3E-02
1.4E-03
D = 0,5
0,2
0,1
10-1
0,05
0,02
0,01
0,005
0.000
10-2
10-1
100
t p (s)
10110
10-5
10-4
10-3
10-2
At
D=
RthJH =
tp / T
1.98
K/W
FWD thermal model values
R (C/W)
0.06
0.15
0.84
0.44
0.33
0.17
Tau (s)
3.9E+00
7.0E-01
1.5E-01
4.4E-02
9.5E-03
2.0E-03
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
10-1
100
t p (s) 10110
Copyright by Vincotech
9
Revision: 1
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