10-FY07BIA041MC-M528E58 Datasheet, PDF (2/25 Pages) Vincotech – Low inductive 12mm flow1 package

Tj=25°C, unless otherwise specified
Parameter
Input Boost Diode
Peak Repetitive Reverse Voltage
DC forward current
Repetitive peak forward current
Power dissipation
Maximum Junction Temperature
Pseudo H-Bridge MOSFET
Drain to source breakdown voltage
DC drain current
Pulsed drain current
Power dissipation
Gate-source peak voltage
Maximum Junction Temperature
Pseudo H-Bridge Diode
Peak Repetitive Reverse Voltage
DC forward current
Repetitive peak forward current
Power dissipation per Diode
Maximum Junction Temperature
DC link Capacitor
Max.DC voltage
Thermal Properties
Storage temperature
Operation temperature under switching condition
Insulation Properties
Insulation voltage
Creepage distance
Clearance
10-FY07BIA041MC-M528E58
preliminary datasheet
Maximum Ratings
Symbol
Condition
Value
Unit
V_RRM
I_F
I_FRM
P_tot
T_jmax
T_j=25°C
T_j=T_jmax
t_p limited by T_jmax
T_j=T_jmax
V_DS
I_D
I_Dpulse
P_tot
Vgs
T_jmax
T_j=T_jmax
t_p limited by T_jmax
T_j=T_jmax
T_h=80°C
T_c=80°C
T_h=80°C
T_c=80°C
T_h=80°C
T_c=80°C
Tc=25°C
T_h=80°C
T_c=80°C
650
V
22
A
28
134
A
48
W
73
175
°C
650
V
34
A
42
255
A
111
W
168
±20
V
150
°C
V_RRM
I_F
I_FRM
P_tot
T_jmax
T_j=25°C
T_j=T_jmax
t_p limited by T_jmax
T_j=T_jmax
V_MAX
T_h=80°C
T_c=80°C
T_h=80°C
T_c=80°C
Tc=25°C
650
V
22
A
29
134
A
48
W
73
175
°C
630
V
T_stg
T_op
V_is
t=2s
DC voltage
-40…+125
°C
-40…+(Tjmax - 25)
°C
4000
V
min 12,7
mm
min 12,7
mm
Copyright by Vincotech
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