10-FY07BIA041MC-M528E58 Datasheet, PDF (13/25 Pages) Vincotech – Low inductive 12mm flow1 package

10-FY07BIA041MC-M528E58
preliminary datasheet
INPUT BOOST
Figure 5
Typical switching energy losses
as a function of collector current
E = f(I_D)
0.3
BOOST MOSFET
0.25
0.2
0.15
0.1
E_{on High T}
E_{off High T}
E_{on Low T}
E_{off Low T}
0.05
0
0
10
20
30
40
With an inductive load at
T_j =
V_DS =
V_GS =
R_gon =
R_goff =
25/125 °C
400
V
10
V
2
Ω
2
Ω
Figure 7
Typical reverse recovery energy loss
as a function of collector (drain) current
E_rec = f(I_c)
0.1
0.08
0.06
50 _{I C (A)} 60
BOOST FWD
E_{rec Low T}
E_{rec High T}
0.04
0.02
0
0
10
20
30
40
50 _{I C (A)} 60
With an inductive load at
T_j =
25/125 °C
V_DS =
400
V
V_GS =
10
V
R_gon =
2
Ω
R_goff =
2
Ω
Figure 6
Typical switching energy losses
as a function of gate resistor
E = f(R_G)
0.6
0.5
0.4
0.3
0.2
0.1
0
0
5
10
With an inductive load at
T_j =
V_DS =
V_GS =
I_D =
25/125 °C
400
V
10
V
30
A
Figure 8
Typical reverse recovery energy loss
as a function of gate resistor
E_rec = f(R_G)
0.06
0.05
0.04
0.03
0.02
0.01
0
0
5
10
With an inductive load at
T_j =
25/125 °C
V_DS =
400
V
V_GS =
10
V
I_D =
30
A
BOOST MOSFET
E_{off High T}
E_{off Low T}
E_{on High T}
E_{on Low T}
15
R _G ( Ω ) ²⁰
BOOST FWD
E_{rec High T}
E_{rec Low T}
15
R _G( Ω ) ²⁰
Copyright by Vincotech
13
Revision: 1