10-FY07BIA041MC-M528E58 Datasheet, PDF (1/25 Pages) Vincotech – Low inductive 12mm flow1 package

flowSOL 1 BI
Features
● Low inductive 12mm flow1 package
● Booster:
○ Dual boost topology
○ MOSFET 650V/37mOhm + SiC diode
○ Bypass rectifier
● Inverter:
○ Pseudo H-bridge topology
○ MOSFET 650V/41mOhm CFD + SiC diode
● Integrated DC-capacitors
● Temperature sensor
Target Applications
● Solar Inverter:
● High efficient transformer-less solar inverter with bipolar
modulation
Types
10-FY07BIA041MC-M528E58
10-FY07BIA041MC-M528E58
preliminary datasheet
650 V/41 mOhm
flow1 12mm housing
Schematic
Tj=25°C, unless otherwise specified
Parameter
Bypass Diode
Repetitive peak reverse voltage
Forward current per diode
Surge forward current
I2t-value
Power dissipation per Diode
Maximum Junction Temperature
Input Boost MOSFET
Drain to source breakdown voltage
DC drain current
Pulsed drain current
Power dissipation
Gate-source peak voltage
Maximum Junction Temperature
Maximum Ratings
Symbol
Condition
V_RRM
I_FAV
I_FSM
I²t
P_tot
T_jmax
DC current
t_p=10ms
T_j=T_jmax
T_h=80°C
T_c=80°C
T_j=25°C
T_h=80°C
T_c=80°C
V_DS
I_D
I_Dpulse
P_tot
V_GS
T_jmax
T_j=T_jmax
T_j=25°C
T_j=T_jmax
T_h=80°C
T_c=80°C
T_h=80°C
T_c=80°C
Value
Unit
1600
V
41
A
55
370
A
370
A²s
50
W
76
150
°C
650
V
35
A
43
297
A
105
W
159
±20
V
150
°C
Copyright by Vincotech
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Revision: 1