10-FY07BIA041MC-M528E58 Datasheet, PDF (5/25 Pages) Vincotech – Low inductive 12mm flow1 package

Figure 1
Typical output characteristics
I_C = f(V_CE)
140
120
100
80
60
40
20
0
0
2
4
At
t_p =
T_j =
V_GE from
250
μs
25
°C
0 V to 20 V in steps of 2 V
10-FY07BIA041MC-M528E58
preliminary datasheet
Pseudo H-Bridge
MOSFET
6
V CE (V)
8
Figure 2
Typical output characteristics
I_C = f(V_CE)
140
120
100
80
60
40
20
0
0
2
4
At
t_p =
T_j =
V_GE from
250
μs
125
°C
0 V to 20 V in steps of 2 V
MOSFET
6
V CE (V)
8
Figure 3
Typical transfer characteristics
I_C = f(V_GE)
30
25
20
15
10
5
0
0
At
t_p =
V_CE =
T_j = T_jmax-25°C
2
4
250
μs
10
V
MOSFET
Figure 4
Typical diode forward current as
a function of forward voltage
I_F = f(V_F)
100
FWD
80
60
40
T_j = 25°C
20
T_j = 25°C
6
V GE (V)
8
T_j = T_jmax-25°C
0
0
1
2
3
4
5 _{V F (V)}
6
At
t_p =
250
μs
Copyright by Vincotech
5
Revision: 1